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Development of Semiconductor Material
(b-FeSi2 film) for Next Generation using IBSD Method
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Akira HEYA, Masaharu HARAGUCHI, Hiroyuki YAMAMOTO, Takeru SAITO,
Kenji YAMAGUCHI and Kiichi HOJOU
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b-FeSi2 films on Si substrate were prepared by varying the deposited thickness
of Fe2Si using ion beam sputter deposition (IBSD) method. The relation
between structural properties and Fe2Si thickness was investigated. It
is found that the crystal structure depends on ratio of Fe to Si atoms.
FeSi2 films with better preferential oriented to (100) direction were
obtained using Fe2Si target instead of Fe or FeSi2 targets.
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Keywords ■■■ |
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environmentally friendly semiconductor
(Kankyo semiconductor), iron silicide, ion beam sputter deposition
method, thin film |
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