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Preparation of SiNx Passivation
Films for PZT Ferroelectric
Capacitors by Catalytic Chemical Vapor Deposition
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Toshiharu MINAMIKAWA, Yasuto YONEZAWA, Akira HEYA, Yoshikazu
FUJIMORI, Takashi NAKAMURA, Atsushi MASUDA and Hideki MATSUMURA |
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The feasibility of SiNx films prepared by catalytic chemical vapor deposition
(Cat-CVD) at low substrate temperatures was studied for passivation of
ferroelectric nonvolatile random access memories (FRAMs). The preparation
of SiNx films on ferroelectric capacitors at low substrate temperature
was performed.
| (1) |
The influence of the thermal radiation from a
hot catalyzer on the substrate was investigated. When the film deposition
using Cat-CVD method starts, the light-transparerent shutter prevented
substrate temperature from increasing. |
| (2) |
The SiNx films on PZT capacitors were prepared
at silane (SiH4) and ammonia (NH3)
ambient of 1.3 Pa at 200℃, without the degradation of the ferroelectricity
of PZT. |
| (3) |
Etching rate of the SiNx films in buffered HF
(16BHF) shows minimum value about 20 nm/min. No oxidation during
air exposure for 3 months is observed for the SiNx film. |
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Keywords ■■■ |
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catalytic chemical vapor deposition,
SiNx film, low deposition temperature, ferroelectric capacitor,
SiH4, NH3 |
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